# US 11,028,022 B2 · Copper-ceramic bonded body and insulation circuit substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,028,022 B2 - Document ID: US11028022B2 - Status: Granted - Kind: B2 - Application number: 16/312,479 - Filed: 2017-06-28 - Published: 2019-05-09 - Granted: 2021-06-08 - Earliest claimed: 2016-06-30 - Assignees: Mitsubishi Materials Corporation - Applicants: Mitsubishi Materials Corporation - Inventors: Nobuyuki Terasaki - Web page: https://patentgrep.com/patent/US11028022B2 ## CPC - C04B 35/645: Pressure sintering - C04B 37/021: {in a direct manner, e.g. direct copper bonding [DCB]} - C04B 37/025: {consisting of glass or ceramic material} - C04B 37/026: {consisting of metals or metal salts} - H10W 40/226: {characterised by projecting parts, e.g. fins to increase surface area (leadframes for cooling H10W70/461)} - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 70/02: of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) - C04B 2235/96: Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance - C04B 2237/08: Non-oxidic interlayers - C04B 2237/09: wherein the active component for bonding is not the largest fraction of the interlayer - C04B 2237/124: based on copper - C04B 2237/125: based on noble metals, e.g. silver - C04B 2237/127: The active component for bonding being a refractory metal - C04B 2237/368: Silicon nitride - C04B 2237/402: Aluminium - C04B 2237/407: Copper - C04B 2237/50: Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating - C04B 2237/59: Aspects relating to the structure of the interlayer - C04B 2237/592: whereby the interlayer is not continuous, e.g. not the whole surface of the smallest substrate is covered by the interlayer - C04B 2237/60: Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface - C04B 2237/706: of one or more of the metallic layers or articles - C04B 2237/708: of one or more of the interlayers - C04B 2237/72: Forming laminates or joined articles comprising at least two interlayers directly next to each other - H10W 40/10: Arrangements for heating - H10W 40/47: by flowing liquids, e.g. forced water cooling - H10W 40/611: {Bolts or screws} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract In a copper-ceramic bonded body of the present invention, at a bonding interface of a copper member and a ceramic member, there are formed a nitride compound layer containing one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer, in order from the ceramic member side, the thickness of the nitride compound layer is 0.15 μm or more and 1.0 μm or less, an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member, and Cu and Si are present at the grain boundary of the nitride compound layer. ## Claims ### Claim 1 A copper-ceramic bonded body comprising: a copper member formed of copper or a copper alloy; and a ceramic member formed of silicon nitride, wherein the copper member and the ceramic member are bonded to form the copper-ceramic bonded body, at a bonding interface of the copper member and the ceramic member, a nitride compound layer including one or more nitride forming elements selected from Ti, Nb, Hf, and Zr, and an Ag—Cu eutectic layer are formed in order from the ceramic member side, a thickness of the nitride compound layer is 0.47 μm or more and 0.89 μm or less, an intermetallic compound phase formed of an intermetallic compound that contains the nitride forming element and Si is present between the copper member and the ceramic member, Cu and Si are present at a grain boundary of the nitride compound layer, and wherein 90° peeling strength between the copper member and the ceramic member is 11.0 kN/m or more and 16.4 kN/m or less. ### Claim 2 (depends on 1) The copper-ceramic bonded body according to claim 1, wherein Ag particles are dispersed in the nitride compound layer. ### Claim 3 (depends on 2) The copper-ceramic bonded body according to claim 2, wherein a particle diameter of the Ag particles dispersed in the nitride compound layer is in a range of 10 nm or more and 100 nm or less. ### Claim 4 (depends on 2) The copper-ceramic bonded body according to claim 2, wherein a ratio C2/C1 is 0.8 or less, wherein, C1 is an average Ag concentration in a region of the nitride compound layer from the interface with the ceramic member to a position 25% of a total thickness of the nitride compound layer, and C2 is an average Ag concentration in a region of the nitride compound layer from the interface with the Ag—Cu eutectic layer to a position 25% of the total thickness of the nitride compound layer from the interface with the copper member. ### Claim 5 (depends on 1) An insulation circuit substrate comprising: a copper layer formed of copper or a copper alloy; and a ceramic substrate formed of silicon nitride, wherein the copper layer is formed on a surface of the ceramic substrate, and the copper layer and the ceramic substrate are formed of the copper-ceramic bonded body according to claim 1. ### Claim 6 (depends on 3) The copper-ceramic bonded body according to claim 3, wherein a ratio C2/C1 is 0.8 or less, wherein, C1 is an average Ag concentration in a region of the nitride compound layer from the interface with the ceramic member to a position 25% of a total thickness of the nitride compound layer, and C2 is an average Ag concentration in a region of the nitride compound layer from the interface with the Ag—Cu eutectic layer to a position 25% of the total thickness of the nitride compound layer from the interface with the copper member.