# US 11,027,977 B2 · Method of manufacturing tantalum carbide material

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- Number: US 11,027,977 B2
- Document ID: US11027977B2
- Status: Granted
- Kind: B2
- Application number: 16/720,476
- Filed: 2019-12-19
- Published: 2020-06-25
- Granted: 2021-06-08
- Earliest claimed: 2018-12-21
- Assignees: Showa Denko K.K.
- Applicants: Showa Denko K.K.
- Inventors: Shunsuke Noguchi
- Web page: https://patentgrep.com/patent/US11027977B2

## CPC

- C01B 32/914: Carbides of single elements
- C23C 8/20: Carburising
- C30B 35/00: Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A method of manufacturing a tantalum carbide material of the present invention includes heating a tantalum material (1) interposed between a pair of graphite guide members (2 and 3) under an atmosphere of a carbon source-containing gas (4) at 1,500° C. or higher for 0.5 hours or longer.

## Claims

### Claim 1

A method of manufacturing a tantalum carbide material in which a tantalum material interposed between a pair of graphite guide members is heated under a carbon source-containing gas atmosphere at 1,500° C. or higher for 0.5 hours or longer to make tantalum carbide from all the tantalum material.

### Claim 2 (depends on 1)

The method of manufacturing a tantalum carbide material according to claim 1, comprising
a process of preparing the tantalum material interposed between the pair of graphite guide members;
a process of placing the tantalum material interposed between the pair of graphite guide members and a hydrocarbon gas source in a container; and
a process of, while the inside of the container is made a closed space, heating the hydrocarbon gas source to generate the carbon source-containing gas and heating the tantalum material under an atmosphere of the carbon source-containing gas to obtain a tantalum carbide material.

### Claim 3 (depends on 2)

The method of manufacturing a tantalum carbide material according to claim 2,
wherein the hydrocarbon gas source includes hydrocarbons, and
wherein the hydrocarbons include one or both of aromatic hydrocarbons and aliphatic hydrocarbons.

### Claim 4 (depends on 1)

The method of manufacturing a tantalum carbide material according to claim 1,
wherein the thickness of the tantalum material is 0.1 mm or more and 3.0 mm or less.

### Claim 5 (depends on 1)

The method of manufacturing a tantalum carbide material according to claim 1,
wherein the pair of graphite guide members are a pair of graphite plates.

### Claim 6 (depends on 1)

The method of manufacturing a tantalum carbide material according to claim 1,
wherein the carbon source-containing gas is generated by heating a hydrocarbon gas source which includes hydrocarbons and graphite powder.