# US 11,027,968 B2 · Semiconductor device with discharge path, and method for producing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,027,968 B2 - Document ID: US11027968B2 - Status: Granted - Kind: B2 - Application number: 16/805,112 - Filed: 2020-02-28 - Published: 2020-09-24 - Granted: 2021-06-08 - Earliest claimed: 2019-03-20 - Assignees: Denso Corporation - Applicants: Denso Corporation - Inventors: Megumi Suzuki; Teruhisa Akashi - Web page: https://patentgrep.com/patent/US11027968B2 ## CPC - B81B 7/0041: {maintaining a controlled atmosphere with techniques not provided for in B81B7/0038} - B81C 1/00309: {suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound} - B81B 7/0061: {suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound} - B81B 2201/0242: Gyroscopes - B81B 2203/0315: Cavities - B81B 2207/096: through the substrate - B81C 2203/019: characterised by the material or arrangement of seals between parts - B81C 2203/038: Bonding techniques not provided for in B81C2203/031 - B81C2203/037 - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) ## Abstract In a semiconductor device, a first substrate and a second substrate are bonded to each other through an insulating film. A hermetically sealed chamber is provided between the first substrate and the second substrate, and a sensing part is enclosed in the hermetically sealed chamber. The second substrate has a through hole penetrating in a stacking direction of the first substrate and the second substrate and exposing the first surface of the first substrate. A penetrating electrode is disposed on a wall surface of the through hole of the second substrate, and is electrically connected to the sensing part. A discharge path is provided, at a position located between the hermetically sealed chamber and the through hole for releasing outgas generated during bonding from the hermetically sealed chamber to the through hole. ## Claims ### Claim 1 A semiconductor device comprising: a first substrate having a first surface; a second substrate having a second surface, the second substrate being bonded to the first substrate such that the second surface faces the first surface of the first substrate and a hermetically sealed chamber is provided between the first substrate and the second substrate, the second substrate having a through hole that penetrates the second substrate in a stacking direction of the first substrate and the second substrate and exposes the first surface of the first substrate; an insulating film disposed between the first surface of the first substrate and the second surface of the second substrate; a sensing part disposed in the hermetically sealed chamber, the sensing part including a vibrator; a penetrating electrode disposed on a wall surface of the through hole of the second substrate, the penetrating electrode being electrically connected to the sensing part; and a discharge path defining a space, at a position located between the hermetically sealed chamber and the through hole. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the discharge path is disposed at the position that is away from the hermetically sealed chamber and the through hole. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the discharge path is disposed at the position that is in communication with the through hole and is away from the hermetically sealed chamber. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the discharge path is disposed at the position that is in communication with the hermetically sealed chamber and is away from the through hole. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the first substrate, the second substrate and the insulating film are bonded to each other entirely in an area between the hermetically sealed chamber and the through hole excluding the position where the discharge path is provided. ### Claim 6 A method for producing a semiconductor device, comprising: preparing a first substrate having a first surface; forming a sensing part in the first substrate adjacent to the first surface; preparing a second substrate having a second surface; forming an insulating film on at least one of the first substrate and the second substrate; bonding the first surface of the first substrate and the second surface of the second substrate through the insulating film to provide a hermetically sealed chamber between the first substrate and the second substrate and to enclose the sensing part including a vibrator in the hermetically sealed chamber; forming a through hole in the second substrate and the insulating film in a stacking direction of the first substrate and the second substrate to expose the first surface of the first substrate; forming a penetrating electrode in the through hole to be electrically connected to the sensing part; and before the bonding, forming a recess at a position that is to be located between the hermetically sealed chamber and the through hole in the bonding and the forming of the through hole, wherein in the bonding, the first surface of the first substrate and the second surface of the second substrate are bonded through the insulating film so that a discharge path is provided by the recess at the position that is to be located between the hermetically sealed chamber and the through hole in the forming of the through hole, the method further comprising: after the forming of the through hole and before the forming of the penetrating electrode, performing a heat treatment to release outgas, which is generated in the bonding, from the hermetically sealed chamber to the through hole through the discharge path. ### Claim 7 (depends on 6) The method according to claim 6, wherein the heat treatment to release the outgas is performed at a temperature higher than a temperature of the bonding.