Integrating diverse sensors in a single semiconductor device
AssigneeNXP USA, Inc.
InventorsLianjun Liu, David J. Monk
Life of this patent
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Abstract
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer.
Claims19
A multi-sensor device comprising:
- a plurality of sensor devices formed over a substrate;
- a cap structure bonded over the plurality of sensor devices to form a hermetically sealed cavity around at least one of the plurality of sensor devices;
- a first through-silicon via (TSV) in the cap structure adjacent an outer edge of the cap structure;
- a first dielectric layer formed over the cap structure;
- additional dielectric layers fabricated over the first dielectric layer;
- and
- a magnetic tunnel junction sensor fabricated in the additional dielectric layers.
A sensor system comprising:
- a first structure having a substrate layer and a first sensor, the first sensor being positioned on a first side of the substrate layer;
- a cap structure bonded over the first sensor on the first side of the substrate layer;
- a first dielectric layer fabricated over the cap structure;
- a magnetic field sensor fabricated on the first dielectric layer after bonding the cap structure and depositing the first dielectric layer.
A multi-sensor device comprising:
- a micro-electromechanical system (MEMS) sensor;
- a cap structure bonded over the MEMS sensor to form a hermetically sealed cavity for the MEMS sensor, wherein the cap structure includes a dielectric layer and integrated circuitry formed in a wafer;
- a first through-silicon via (TSV) formed in the cap structure;
- a redistribution layer formed on an external surface of the wafer, wherein an interconnect of the redistribution layer is in contact with the first TSV in the cap structure;
- an oxide isolation layer deposited over the redistribution layer and portions of the external surface of the wafer that are not covered by the redistribution layer;
- and
- a magnetic field sensor fabricated on the oxide isolation layer.
Dependencies are inferred from the claim text.