Metallization in integrated circuit structures
AssigneeIntel Corporation
InventorsDaniel B. O'Brien, Christopher J. Wiegand, Lukas M. Baumgartel, Oleg Golonzka, Dan S. Lavric, Daniel B. Bergstrom, Jeffrey S. Leib, Timothy Michael Duffy, Dax M. Crum
Life of this patent
Estimating the term…
Abstract
Disclosed herein are structures, methods, and assemblies related to metallization in integrated circuit (IC) structures. For example, in some embodiments, an IC structure may include a first nanowire in a metal region and a second nanowire in the metal region. A distance between the first nanowire and the second nanowire may be less than 5 nanometers, and the metal region may include tungsten between the first nanowire and the second nanowire.
Claims20
An integrated circuit (IC) structure, comprising:
- a first nanowire in a metal region;
- and
- a second nanowire in the metal region;
- wherein a distance between the first nanowire and the second nanowire is less than 5 nanometers, the metal region includes tungsten between the first nanowire and the second nanowire, the metal region includes a first portion between the first nanowire and the second nanowire, the metal region includes a second portion not between the first nanowire and the second nanowire, and a ratio of chlorine to fluorine in the first portion is less than a ratio of chlorine to fluorine in the second portion.
An integrated circuit (IC) structure, comprising:
- a first nanowire in a metal region;
- and
- a second nanowire in the metal region, wherein the metal region includes a first portion between the first nanowire and the second nanowire, and the metal region includes a second portion not between the first nanowire and the second nanowire;
- wherein a ratio of chlorine to fluorine in the first portion is less than a ratio of chlorine to fluorine in the second portion.
An integrated circuit (IC) structure, comprising:
- a first nanowire in a metal region;
- and
- a second nanowire in the metal region
- wherein the metal region includes tungsten, an average grain size of the tungsten in a portion of the metal region is less than 8 nanometers, the metal region includes a first portion between the first nanowire and the second nanowire, and the metal region includes a second portion not between the first nanowire and the second nanowire, and a ratio of chlorine to fluorine in the first portion is less than a ratio of chlorine to fluorine in the second portion.
Dependencies are inferred from the claim text.