Composition for TiN hard mask removal and etch residue cleaning
AssigneeVersum Materials US, LLC
InventorsChao-Hsiang Chen, Yi-Chia Lee, Wen Dar Liu, Chung-Yi Chang
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Abstract
Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.
Claims16
A composition for selectively removing at least one of titanium nitride and photoresist etch residue material from the surface of a microelectronic device having same thereof, said composition consisting of:
- a solvent which is water and/or one or more non-aqueous solvents;
- tetraethylammonium hydroxide (TEAH);
- triammonium citrate (TAC);
- a metal corrosion inhibitor selected from the group consisting of sorbitol, benzotriazole (BZT), PEG 400, pyrazole and theophylline;
- and
- an oxidizing stabilizer selected from the group consisting of ethylenediaminetetraacetic acid (EDTA), gluconic acid and N-2-bis(carboxymethyl)aminoethyl-N-(2-hydroxy ethyl) glycine (HEDTA);
- wherein the composition has a pH ranging from 5.5 to 14.
Dependencies are inferred from the claim text.