Alternative designs for magnetic recording assisted by a single Spin Hall Effect (SHE) layer in the write gap
AssigneeHeadway Technologies, Inc.
InventorsWenyu Chen, Yan Wu
Life of this patent
Estimating the term…
Loading patent…
AssigneeHeadway Technologies, Inc.
InventorsWenyu Chen, Yan Wu
Estimating the term…
A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed in a write gap between a main pole (MP) trailing side and trailing shield (TS). The SHE layer contacts either the MP or TS, and has a front side at the air bearing surface or recessed therefrom. In one embodiment, a current (I1) is applied between the MP trailing side and SHE layer and is spin polarized to generate a first spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. In a second embodiment, a current (I2) is applied between the SHE layer and TS and is spin polarized to generate a second spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.
A Spin Hall Effect (SHE) assisted magnetic recording (SHAMR) device, comprising:
A method of forming a Spin Hall Effect (SHE) assisted magnetic recording (SHAMR) device, comprising:
Dependencies are inferred from the claim text.