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US 11,014,866 B2Granted
Synthesis and use of precursors for vapor deposition of tungsten containing thin films
AssigneeASM IP Holding B.V.
InventorsTimo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
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Abstract
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
Claims20
A process for forming a W containing thin film on a substrate in a reaction chamber comprising at least one deposition cycle, the deposition cycle comprising:
- contacting the substrate with a vapor phase W precursor, wherein the W in the W precursor has an oxidation state of +IV, such that W containing species adsorb on a surface of the substrate;
- contacting the substrate with a vapor phase second precursor, wherein the second precursor reacts with the W containing species on the surface of the substrate.
Dependencies are inferred from the claim text.