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US 11,011,605 B2Granted
Diamond semiconductor device
AssigneeEvince Technology Limited
InventorGareth Andrew Taylor
Life of this patent
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Abstract
An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers.
Claims24
An electrical device comprising:
- a substrate of diamond material;
- at least one elongate first electrically conductive portion extending into a respective recess in said substrate, wherein said respective recess extends from a surface of the substrate;
- and
- at least one doped semiconducting region, arranged between said at least one respective said first electrically conductive portion and said substrate, and adapted to behave as an n type semiconducting material on application of an electric field, between said first electrically conductive portion and said substrate, suitable to cause a region of positive space charge within the said at least one doped semiconducting region,
- wherein said respective recess further comprises at least one inclined distal surface defining a point at a tip of said respective recess, wherein said at least one doped semiconducting region is arranged on a said at least one respective inclined distal surface.
2 more elements
A method of forming an electrical device, the method comprising:
- forming at least one recess in a substrate of diamond material, wherein said at least one recess extends from a surface of the substrate;
- forming at least one doped semiconducting region in said at least one recess;
- and
- forming at least one elongate first electrically conductive portion in said at least one recess, wherein said at least one doped semiconducting region is arranged between said at least one elongate first electrically conductive portion and said substrate and is adapted to behave as an n type semiconducting material on application of an electric field, between said at least one elongate first electrically conductive portion and said substrate, suitable to cause a region of positive space charge within said at least one doped semiconducting region,
- wherein forming said at least one recess comprises forming at least one inclined distal surface defining a point at a tip of said at least one recess, wherein said at least one doped semiconducting region is arranged on said at least one inclined distal surface.
2 more elements
Dependencies are inferred from the claim text.