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US 11,009,570 B2Granted
Hybrid oxide/metal cap layer for boron-free free layer
AssigneeSamsung Electronics Co., Ltd.
InventorsIkhtiar, Xueti Tang, Mohamad Krounbi
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Abstract
A magnetic tunnel junction stack includes: a pinned layer; a main oxide barrier layer on the pinned layer; a free layer on the main oxide barrier layer; and a hybrid oxide/metal cap layer on the free layer. The hybrid oxide/metal cap layer includes: a first oxide layer on the free layer; a second oxide layer on the first oxide layer; and a metallic cap layer on the second oxide layer, wherein the free layer is free of boron (B).
Claims20
A magnetic tunnel junction stack comprising:
- a pinned layer;
- a main oxide barrier layer on the pinned layer;
- a free layer on the main oxide barrier layer;
- and
- a hybrid oxide/metal cap layer on the free layer,
- wherein the hybrid oxide/metal cap layer comprises:
- a first oxide layer on the free layer;
- a second oxide layer on the first oxide layer;
- and
- a metallic cap layer on the second oxide layer,
- wherein the free layer is free of boron (B), and
- wherein a thickness of the first oxide layer is about 1 to 6 Å and a total thickness of the first oxide layer and the second oxide layer is about 4 to 14 Å.
9 more elements
A method of manufacturing a magnetic tunnel junction stack, the method comprising:
- forming a main oxide barrier layer on a pinned layer;
- forming a free layer on the main oxide barrier layer;
- and
- forming a hybrid oxide/metal cap layer on the free layer,
- wherein the forming of the hybrid oxide/metal cap layer comprises:
- forming a first oxide layer on the free layer;
- forming a second oxide layer on the first oxide layer;
- and
- forming a metallic layer on the second oxide layer, and
- wherein the free layer is free of boron (B), and
- wherein a thickness of the first oxide layer is about 1 to 6 Å and a total thickness of the first oxide layer and the second oxide layer is about 4 to 14 Å.
8 more elements
Dependencies are inferred from the claim text.