Semiconductor circuits, devices and methods
AssigneeX-Fab Semiconductor Foundries AG
InventorsKlaus Heinrich, Hartmut Liebing, Andreas Roth, Stefan Eisenbrandt, Andreas Ott, Bruno Boury
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Abstract
A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.
Claims15
A voltage-controlled semiconductor well resistor comprising a gate, a well and a first polycrystalline semiconductor layer forming a shield, wherein the first polycrystalline semiconductor layer has an opening and forms a ring that surrounds a region between the gate and the well, wherein the gate is arranged to control the conductivity in a resistor region of said well resistor.
A method for use in manufacturing a voltage-controlled semiconductor well resistor, the method comprising:
- providing a semiconductor substrate;
- forming a well region within the substrate;
- forming a polycrystalline semiconductor layer on or above the substrate;
- forming a dielectric layer on or above the substrate;
- and
- forming a gate within a conductive layer above said polycrystalline semiconductor layer,
- wherein the polycrystalline semiconductor layer forms a shield having an opening and forms a ring surrounding a region between the gate and the well, and
- wherein the gate is arranged to control the conductivity in a resistor region of said well resistor.
Dependencies are inferred from the claim text.