Methods of preparation of organometallic halide structures
AssigneeKing Abdullah University of Science and Technology
InventorsOsman Bakr, Makhsud I. Saidaminov, Ahmed L. Abdelhady, Kristian Rahbek Knudsen
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Abstract
Embodiments of the present disclosure provide methods of growing organometallic halide structures such as single crystal organometallic halide perovskites, methods of use, devices incorporating organometallic halide structures, and the like.
Claims20
A single-phase crystal having a doped AMX3 structure, wherein the dopant is a trivalent cation, wherein the crystal has a charge carrier lifetime that exceeds the charge carrier lifetime of a polycrystalline thin film comprising a corresponding AMX3 structure and is made by:
- (1) dissolving a mixture of the trivalent cation, MX2 and AX in a solvent, wherein A is selected from the group consisting of organic cations and inorganic cations, or a combination thereof, M is a divalent cation selected from the group consisting of Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, and Eu, and X is a halide;
- and
- (2) heating the mixture in the solvent to a temperature sufficient to form the doped AMX3 crystal, wherein the temperature corresponds to the inverse temperature solubility for dissolved AMX3.
A single-phase crystal having a doped AMX3 structure, wherein the dopant is a trivalent cation, wherein A is selected from the group consisting of organic cations and inorganic cations, or a combination thereof, M is a divalent cation selected from the group consisting of Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, and Eu, and X is a halide.
Dependencies are inferred from the claim text.