Back to results
US 11,001,504 B2Granted
Compound semiconductor and manufacturing method thereof
AssigneeLG Chem, Ltd.
InventorsJae-Ki Lee, Tae-Hoon Kim, Cheol-Hee Park
Life of this patent
Estimating the term…
Abstract
Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below: M1aCo4Sb12-xM2x Chemical Formula 1 where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≤a≤1.8, and 0≤x≤0.6.
Claims17
A compound semiconductor, expressed by Chemical Formula 1 below:
- M1aCo4Sb12-xM2x Chemical Formula 1
- where M1 is at least one selected from In and a rare earth metal element and M2 includes both In and a rare earth metal element, M2 being substituted to a Sb site, wherein 0≤a≤1.8, and 0<x≤0.4.
Dependencies are inferred from the claim text.