Semiconductor laser device, manufacturing method thereof, and light emitting device
AssigneeSharp Kabushiki Kaisha
InventorsToshiyuki Kawakami, Masayuki Ohta, Ryota Kawamura
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Abstract
A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.
Claims11
A semiconductor laser device including a first clad layer, an active layer, a second clad layer, and an electrode layer in this order, the semiconductor laser device comprising:
- an optical waveguide that extends from inside of an end face of a second end of the semiconductor laser device toward an end face of a first end of the semiconductor laser device;
- and
- a reflecting surface which is arranged at an end on a second end side of the optical waveguide and which crosses the active layer,
- wherein the reflecting surface has a dielectric film and a metal film in this order from the active layer, and
- the electrode layer is arranged on the metal film.
Dependencies are inferred from the claim text.