Vertical metal-air transistor
AssigneeInternational Business Machines Corporation
InventorsJuntao Li, Kangguo Cheng, Ruilong Xie, Chanro Park
Life of this patent
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Abstract
A method of forming a vertical metal-air transistor device is provided. The method includes forming a precursor stack with a stack template on the precursor stack on a substrate. The method further includes forming a bottom spacer on the substrate around the precursor stack, and depositing a liner casing on the precursor stack. The method further includes depositing a conductive gate layer on the bottom spacer and liner casing. The method further includes reducing the size of the stack template to form a template post on the precursor stack, and forming a stack cap on the template post and precursor stack.
Claims14
A method of forming a vertical metal-air transistor device, comprising:
- forming a precursor stack with a stack template on the precursor stack on a substrate;
- forming a bottom spacer on the substrate around the precursor stack;
- depositing a liner casing on the precursor stack;
- depositing a conductive gate layer on the bottom spacer and liner casing;
- reducing the size of the stack template to form a template post on the precursor stack;
- and
- forming a stack cap on the template post and precursor stack.
A method of forming a vertical metal-air transistor device, comprising:
- forming a lower electrode layer on a substrate;
- forming a graphene layer on the lower electrode layer;
- forming an upper electrode layer on the graphene layer;
- forming a stack template on the upper electrode layer;
- removing portions of the upper electrode layer, graphene layer, and lower electrode layer to form a precursor stack on a lower electrode slab, wherein the precursor stack includes an upper electrode column, a lower electrode column on the lower electrode slab, and a graphene plate between the upper electrode column and lower electrode column;
- forming a bottom spacer on the lower electrode slab around the precursor stack;
- depositing a liner casing on the precursor stack and bottom spacer;
- depositing a conductive gate layer on the liner casing;
- removing a portion of the liner casing on the stack template;
- reducing the size of the stack template to form a template post on the precursor stack;
- and
- forming a stack cap on the template post and precursor stack.
Dependencies are inferred from the claim text.