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US 10,998,292 B2Granted
Offset pads over TSV
AssigneeInvensas Bonding Technologies, Inc.
InventorsBongsub Lee, Guilian Gao
Life of this patent
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Abstract
Representative techniques and devices including process steps may be employed to mitigate the potential for delamination of bonded microelectronic substrates due to metal expansion at a bonding interface. For example, a metal pad may be disposed at a bonding surface of at least one of the microelectronic substrates, where the contact pad is positioned offset relative to a TSV in the substrate and electrically coupled to the TSV.
Claims13
A method of forming a microelectronic assembly, comprising:
- providing a first through silicon via (TSV) into a first substrate having a first bonding surface, the first TSV extending in a direction normal to the first bonding surface through at least a portion of the first substrate without being exposed at the first bonding surface;
- providing a recess in the first bonding surface, aligned with and overlapping the first TSV in a direction normal to the first bonding surface;
- providing a first metal contact pad at the first bonding surface, offset relative to the first TSV and not overlapping the first TSV in the direction normal to the first bonding surface, the first metal contact pad electrically coupled to the first TSV with one or more embedded conductive traces;
- and
- bonding the first substrate to a second substrate, the recess adjacent to disposed at a bonding interface between the first and second substrates.
2 more elements
A method of forming a microelectronic assembly, comprising:
- forming a first substrate to have a base layer and an insulating layer over the base layer, the insulating layer having a first bonding surface, a first through silicon via (TSV) extending at least partially through the base layer of the first substrate in a direction normal to the first bonding surface without being exposed at the first bonding surface;
- forming a recess in the first bonding surface overlapping the first TSV, the recess comprising an expansion region configured to compensate for thermal expansion of the first TSV during a bonding step;
- disposing a first metal contact pad at the first bonding surface, the first metal contact pad offset relative to a location of the first TSV;
- electrically coupling the first metal contact pad to the first TSV with one or more embedded conductive traces;
- and
- direct bonding the first substrate to a second substrate using a direct dielectric-to-dielectric, non-adhesive bonding technique at the first bonding surface of the first substrate.
3 more elements
Dependencies are inferred from the claim text.