Ion detector
AssigneeHamamatsu Photonics K.K.
InventorsHiroshi Kobayashi, Takeshi Endo, Hiroki Moriya, Toshinari Mochizuki
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AssigneeHamamatsu Photonics K.K.
InventorsHiroshi Kobayashi, Takeshi Endo, Hiroki Moriya, Toshinari Mochizuki
Estimating the term…
The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in a multi-mode ion detector. The ion detector includes a dynode unit, a first electron detection portion including a semiconductor detector having an electron multiplication function, a second electron detection portion including an electrode, and a gate part. The first and second electron detection portions are capable of ion detection at different multiplication factors. The gate part includes at least a final-stage dynode as a gate electrode, and controls switching between passage and interruption of secondary electrons which are directed toward the first electron detection portion by adjusting a set potential of the gate electrode.
An ion detector comprising:
Dependencies are inferred from the claim text.