N-type gallium nitride scintillation for fast-neutron detection
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsNoel A. Guardala, Veerendra K. Mathur, Johnathan D. Wensman
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Abstract
An inventive neutron detector includes an n-type GaN wafer and a photomultiplier, which are optically coupled with each other. The n-type GaN wafer is irradiated with neutrons from a neutron source, such as including a particle accelerator and a beryllium target. Scintillation of the n-type GaN resulting from the neutron irradiation is amplified by the photomultiplier and is analyzed using a data acquisition system.
Claims15
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, a photomultiplier tube, and a data acquisition system for performing measurements with respect to said signals generated by said photomultiplier tube, wherein:
- said n-type GaN wafer is made of n-type GaN crystal;
- said n-type GaN wafer and said photomultiplier tube are optically coupled;
- said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions;
- scintillation of said n-type GaN wafer occurs upon said elastic recoil of said ions;
- said n-type GaN wafer is characterized by a thickness of less than or equal to approximately 600 μm;
- said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurements.
A neutron detection method comprising:
- irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions;
- sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n-type GaN wafer is associated with said elastic recoil of said ions;
- producing output signals;
- processing said output signals to produce spectroscopic information pertaining to neutron energies associated with said fast neutron irradiation of said n-type GaN wafer;
- selecting said n-type GaN wafer as having a thickness sufficiently small that gamma radiation will not appreciably manifest in said spectroscopic information.
A neutron detection method comprising:
- irradiating an n-type GaN wafer with fast neutrons, said n-type GaN wafer made of n-type GaN crystal, wherein incident said fast neutrons result in elastic recoil of ions selected from the group consisting of Ga ions and N ions;
- sensing scintillation of said n-type GaN wafer, said scintillation of said n-type GaN wafer occurring in response to said fast neutron irradiation, wherein said scintillation of said n-type GaN wafer is associated with said elastic recoil of said ions;
- selecting said n-type GaN wafer as having a thickness sufficiently small that the neutron detection method is at least substantially insensitive to gamma radiation.
A neutron detection apparatus comprising a fast neutron source, an n-type GaN wafer, and a photomultiplier tube, wherein:
- said n-type GaN wafer is made of n-type GaN crystal;
- said n-type GaN wafer and said photomultiplier tube are optically coupled;
- said fast neutron source is capable of irradiating said n-type GaN wafer with fast neutrons so that incident said fast neutrons undergo elastic scattering characterized by elastic recoil of ions, said ions being Ga ions, or N ions, or both Ga ions and N ions;
- scintillation of said n-type GaN wafer occurs upon said elastic recoil of said ions;
- measurable signals are generated by said photomultiplier tube in response to said scintillation of said n-type GaN wafer;
- said n-type GaN wafer is sufficiently thin that gamma radiation will not appreciably manifest in said measurable signals.
Dependencies are inferred from the claim text.