Magnetoresistance effect device
AssigneeTDK Corporation
InventorsShinji Hara, Akimasa Kaizu
Life of this patent
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Abstract
The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.
Claims7
A magnetoresistance effect device comprising:
- a magnetoresistance effect element that includes:
- a first magnetization free layer,
- a magnetization fixed layer or a second magnetization free layer, and
- a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer;
- and
- a magnetic material part configured to apply a magnetic field to the magnetoresistance effect element,
- wherein:
- the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction of the magnetoresistance effect element, and
- the magnetic material part contains a hard magnetic material.
Dependencies are inferred from the claim text.