Superconductive memory cells and devices
AssigneePsiquantum, Corp.
InventorFaraz Najafi
Life of this patent
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Abstract
An electronic device (e.g., a superconducting memory cell) includes a substrate and a layer of superconducting material disposed over the substrate. The layer of superconducting material is patterned to form a plurality of distinct instances of the layer of superconducting material including: a first wire; and a loop that is (i) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state. The loop is configured to form a persistent current via the capacitive coupling in response to a write current applied to the first wire while the loop and the first wire are in the superconducting state. The persistent current represents a logic state of the electronic device.
Claims14
An electronic device, comprising:
- a substrate;
- and
- a layer of superconducting material disposed over the substrate, wherein the layer of superconducting material is patterned to form a plurality of distinct instances of the layer of superconducting material including:
- a first wire;
- and
- a loop that is (i) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state, wherein the loop is configured to form a persistent current via the capacitive coupling in response to a write current applied to the first wire while the loop and the first wire are in the superconducting state, and the persistent current represents a logic state of the electronic device.
An electronic device, comprising:
- a first wire made of a first superconducting material;
- and
- a loop that is:
- made of a second superconducting material;
- distinct and separate from any other electrical wire, including the first wire;
- and
- capacitively coupled to the first wire while in a superconducting state;
- wherein the loop is configured to form a persistent current via the capacitive coupling in response to a write current applied to the first wire, and the persistent current represents a logic state of the electronic device.
A memory device, comprising, an array of memory cells, each memory cell of the array of memory cells comprising:
- a substrate;
- a layer of superconducting material disposed over the substrate, wherein the layer of superconducting material is patterned to form a plurality of distinct instances of the layer of superconducting material including:
- a first wire;
- and
- a loop that is (i) distinct and separate from the first wire and (ii) capacitively coupled to the first wire while the loop and the first wire are in a superconducting state, wherein the loop is configured to form a persistent current via the capacitive coupling in response to a write current applied to the first wire while the loop and the first wire are in the superconducting state, and the persistent current represents a logic state of the memory cell;
- and
- circuitry to address a respective memory cell in the array of memory cells so as to direct a write current to the first wire of a respective memory cell.
A method, comprising:
- obtaining an electronic device comprising:
- a substrate;
- a first wire of a first superconducting material disposed over the substrate;
- and
- a loop of a second superconducting material disposed over the substrate, wherein, when the loop and the first wire are in a superconducting state, the loop is capacitively coupled to the first wire;
- while the loop and the first wire are in a superconducting state, applying a current to the first wire, thereby transferring a persistent current to the loop via the capacitive coupling between the first wire and the loop;
- and
- wherein the persistent current in the loop represents a logic state.
Dependencies are inferred from the claim text.