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US 10,978,988 B2Granted
Selective emitter for thermophotovoltaic power generator
AssigneeNippon Steel Corporation
InventorsShinji Tokumaru, Tomohiro Uno
Life of this patent
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Abstract
A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric layer provided on another surface of the composite layer at an opposite side to the first dielectric layer, the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor.
Claims10
A selective emitter comprising
- a metal body,
- a lower layer made of a dielectric provided on one surface of the metal body,
- a composite layer provided on another surface of the lower layer at an opposite side to the metal body side, and
- an upper layer made of a dielectric provided on another surface of the composite layer at an opposite side to the lower layer, and
- the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor,
- wherein the metal body is formed by titanium-tungsten-silicide (Ti—W—Si) and tungsten silicide (W—Si) stacked together.
3 more elements
Dependencies are inferred from the claim text.