Semiconductor devices and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-goo Kang, Sang-yeol Kang, Youn-soo Kim, Jin-su Lee, Hyung-suk Jung, Kyu-ho Cho
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Abstract
A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer comprising a niobium oxide;
- converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer;
- forming a dielectric layer on the first lower electrode layer;
- and
- forming an upper electrode on the dielectric layer,
- wherein the dielectric layer comprises a hafnium oxide, the hafnium oxide having a tetragonal crystalline phase resulting from the niobium nitride of the first lower electrode layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a mold layer having an opening on a substrate;
- forming a preliminary lower electrode layer on the mold layer, the preliminary lower electrode layer covering an inner wall of the opening of the mold layer and comprising a niobium oxide;
- converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer;
- forming a dielectric layer on the first lower electrode layer;
- and
- forming an upper electrode layer on the dielectric layer,
- wherein the dielectric layer comprises a hafnium oxide, the hafnium oxide having a tetragonal crystalline phase resulting from the niobium nitride of the first lower electrode layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer comprising a niobium oxide;
- converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a plasma nitridation process on the preliminary lower electrode layer;
- forming a dielectric layer on the first lower electrode layer, the dielectric layer comprising a hafnium oxide, a portion of the dielectric layer in contact with the first lower electrode layer comprises a hafnium oxide having a tetragonal crystalline phase resulting from the niobium nitride of the first lower electrode layer;
- and
- forming an upper electrode on the dielectric layer.
Dependencies are inferred from the claim text.