Integrated device and method of forming the same

A method for forming an integrated device, comprising:

• providing a first circuit having a first connecting path, a second connecting path in a metal line layer, and a third connecting path, wherein the first connecting path is electrically coupled to a first terminal of the second connecting path, and the third connecting path is electrically coupled to a second terminal of the second connecting path, wherein the first connecting path overlaps with the second connecting path at the first terminal of the second connecting path, and the third connecting path overlaps with the second connecting path at the second terminal of the second connecting path;
• analyzing an electromigration (EM) data of the second connecting path to determine if the second connecting path induces EM phenomenon;
• modifying the first circuit for generating a second circuit when the second connecting path induces EM phenomenon, comprising arranging a fourth connecting path to electrically couple to the first connecting path and the third connecting path;
• and
• generating the integrated device according to the second circuit.

A system for forming an integrated device, comprising:

• a designing tool, arranged to provide a first circuit cell, wherein the first circuit cell includes a first transistor, a second transistor, and a connecting path in a metal line layer , wherein the first transistor is coupled to the second transistor through the connecting path;
• an electromigration (EM) analyzing tool, arranged to analyze an EM data of the connecting path to determine if the connecting path induces EM phenomenon;
• a modifying tool, arranged to modify the connecting path for generating a second circuit cell having a modified connecting path by adding a parallel path when the EM analyzing tool indicates that the connecting path induces EM phenomenon;
• and
• a fabricating tool, arranged to generate the integrated device according to the second circuit cell.