System and method for performing lithography process in semiconductor device fabrication

A method for semiconductor device fabrication, comprising:

• providing a metrology tool embedded in a lithography tool;
• using the metrology tool to determine a plurality of topographical heights, wherein the using the metrology tool is a detector of air discharged onto a first target surface of a first substrate;
• using a process parameter control module operable to generate a wafer map from the plurality of topographical heights, wherein the generating the wafer map includes:
• determining a comparison of each of the plurality of topographical heights with a predicted topographical height based on design data;
• sending the wafer map to the lithography tool operable to receive the wafer map;
• performing a first exposure process on the first target surface using the lithography tool according to the wafer map, wherein the performing the first exposure process includes exposing a first coordinate on the first target surface while concurrently using the metrology tool to determine a first topographical height of the plurality of topographical heights, the first topographical height of a second coordinate on the first target surface;
• and
• performing a second exposure process on a second target surface of a second substrate using the lithography tool according to the wafer map, without performing a topographical height measurement on the second substrate.

A method of semiconductor device fabrication, comprising:

• determining a plurality of topographical heights by discharging air onto a first target surface of photoresist on a first substrate;
• gathering data including process data from second and third substrates;
• generating a wafer map including a plurality of offset values between the plurality of topographical heights and the process data;
• sending the wafer map to a lithography tool;
• performing a first exposure process on the first target surface of photoresist using the lithography tool according to the wafer map, wherein the performing the first exposure process includes exposing a first coordinate on the first target surface of photoresist;
• concurrently with performing the first exposure process, determining a first topographical height of the plurality of topographical heights, the first topographical height of a second coordinate on the first target surface of photoresist;
• and
• performing a second exposure process on a second target surface of a second substrate using the lithography tool according to the wafer map, without performing a topographical height measurement on the second substrate.