High resistivity soft magnetic material for miniaturized power converter
AssigneeInternational Business Machines Corporation
InventorsHariklia Deligianni, William J. Gallagher, Andrew J. Kellock, Eugene J. O'Sullivan, Lubomyr T. Romankiw, Naigang Wang
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Abstract
An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
Claims10
A method for forming an on-chip magnetic structure, the method comprising:
- activating a magnetic seed layer with palladium, the magnetic seed layer comprising nickel being arranged directly on an adhesion layer arranged directly on a semiconductor substrate, the adhesion layer being a single layer;
- adding a lead salt to a plating solution;
- electrolessly plating, with the plating solution, a magnetic alloy onto the palladium to form a Pd/CoWP layer;
- and
- annealing the substrate;
- wherein the Pd/CoWP layer comprises cobalt in a range from about 80 to about 90 at. % based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
Dependencies are inferred from the claim text.