Dielectric layer, optical recording medium, sputtering target and oxide
AssigneeKobe Steel, Ltd.
InventorYuki Tauchi
Life of this patent
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Abstract
A dielectric layer is formed from an oxide containing Sn and at least one of Zn, Zr, Si and Ga. The molar percentages of Sn, Zn, Zr, Si, and Ga, relative to the total elements in the oxide, represented by a, b, c, d, and e, respectively, satisfy the conditions (1)-(7): (1) 0≤b/(a+b)≤0.6, (2) 0≤(c+d)/(a+b+c+d+e)≤0.5, (3) 0≤b≤50, (4) 0≤c≤40, (5) 0≤d≤45, (6) 0≤e≤40, and (7) 20≤b+c+d+e≤80. The dielectric layer enables favorable information recording in an oxide-based recording layer on which the dielectric layer is directly overlaid, does not require preventive measures for health hazard, and is superior in durability.
Claims6
A dielectric layer for directly overlaying on a recording layer for recording carried out by irradiation with light,
- wherein
- the dielectric layer is formed from an oxide consisting of a Sn element and at least one element selected from the group consisting of a Zn element, a Zr element, a Si element and a Ga element, and
- the dielectric layer satisfies the following conditions (1) to (7), wherein a content of the Sn element is a mol %, a content of the Zn element is b mol %, a content of the Zr element is c mol %, a content of the Si element is d mol %, and a content of the Ga element is e mol %, with respect to a total of elements other than oxygen in the oxide:
- 0≤b/(a+b)≤0.6 (1),
- 0≤(c+d)/(a+b+c+d+e)≤0.5 (2),
- 0≤b≤50 (3),
- 0≤c≤40 (4),
- 0≤d≤45 (5),
- 0≤e≤40 (6), and
- 20≤b+c+d+e≤80 (7).
A sputtering target for forming a dielectric layer for directly overlaying on a recording layer for recording carried out by irradiation with light,
- wherein the sputtering target consists of a Sn element and at least one element selected from the group consisting of a Zn element, a Zr element, a Si element and a Ga element,
- wherein the sputtering target satisfies the following conditions (1) to (7), wherein a content of the Sn element is a mol %, a content of the Zn element is b mol %, a content of the Zr element is c mol %, a content of the Si element is d mol %, and a content of the Ga element is e mol %, with respect to a total of elements in the sputtering target:
- 0≤b/(a+b)≤0.6 (1),
- 0≤(c+d)/(a+b+c+d+e)≤0.5 (2),
- 0≤b≤50 (3),
- 0≤c≤40 (4),
- 0≤d≤45 (5),
- 0≤e≤40 (6), and
- 20≤b+c+d+e≤80 (7).
An oxide, consisting of:
- a Sn element;
- and
- at least one element selected from the group consisting of a Zn element, a Zr element, a Si element and a Ga element,
- wherein the oxide satisfies the following conditions (1) to (7), wherein a content of the Sn element is a mol %, a content of the Zn element is b mol %, a content of the Zr element is c mol %, a content of the Si element is d mol %, and a content of the Ga element is e mol %, with respect to a total of elements other than oxygen:
- 0≤b/(a+b)≤0.6 (1),
- 0≤(c+d)/(a+b+c+d+e)≤0.5 (2),
- 0≤b≤50 (3),
- 0≤c≤40 (4),
- 0≤d≤45 (5),
- 0≤e≤40 (6), and
- 20≤b+c+d+e≤80 (7).
Dependencies are inferred from the claim text.