Method for preparing silicon and/or germanium nanowires
AssigneeCommissariat a l'Energie Atomique
InventorsPascale Chenevier, Peter Reiss
Life of this patent
Estimating the term…
Abstract
The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.
Claims10
Method for preparing a material made of silicon and/or germanium nanowires, that comprises the steps of:
- i) placing a silicon source and/or a germanium source in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from Sn, In, Bi, Sb, and Ga, by means of which the silicon and/or germanium nanowires are obtained,
- ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i);
- the catalyst, and optionally the silicon source and/or the germanium source, being heated before, during, and/or after the placing in contact under temperature and pressure conditions allowing the growth of silicon and/or germanium nanowires, the heating being done at a temperature of between 200° C. and 500° C.
Dependencies are inferred from the claim text.