Slicing SiC material by wire electrical discharge machining
AssigneeInfineon Technologies AG
InventorsNirdesh Ojha, Francisco Javier Santos Rodriguez, Roland Rupp, Markus Heinrici, Karin Delalut, Claudia Friza
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Abstract
A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.
Claims20
A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot, the method comprising:
- supporting the base SiC wafer with a support substrate;
- while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer, wherein the WEDM process comprises applying a dielectric liquid between the wire and the base SiC wafer and moving the wire in a direction transverse to a side face of the base SiC wafer as the wire cuts through the base SiC wafer;
- and
- rotating the base SiC wafer as the wire cuts through the base SiC wafer during the WEDM process.
Dependencies are inferred from the claim text.