DBI to Si bonding for simplified handle wafer
AssigneeInvensas Bonding Technologies, Inc.
InventorsChandrasekhar Mandalapu, Gaius Gillman Fountain, Jr., Guilian Gao
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Abstract
Devices and techniques include process steps for preparing various microelectronic components for bonding, such as for direct bonding without adhesive. The processes include providing a first bonding surface on a first surface of the microelectronic components, bonding a handle to the prepared first bonding surface, and processing a second surface of the microelectronic components while the microelectronic components are gripped at the handle. In some embodiments, the processes include removing the handle from the first bonding surface, and directly bonding the microelectronic components at the first bonding surface to other microelectronic components.
Claims17
A method of forming a microelectronic assembly, comprising:
- preparing a first bonding surface of a first substrate, including planarizing the first bonding surface to have a first predetermined maximum surface variance, the first bonding surface comprising a dielectric and including one or more conductive interconnects;
- direct bonding a sacrificial second substrate to the first bonding surface using a direct dielectric-to-dielectric, non-adhesive technique, the second substrate comprising a handle to support the first substrate during processing of the first substrate;
- while supporting the first substrate at the handle, the handle bonded to the first bonding surface of the first substrate, planarizing a second surface of the first substrate, opposite the first surface, to form a second bonding surface of the first substrate having a second predetermined maximum surface variance;
- singulating the first substrate into a plurality of microelectronic dies;
- and
- removing the handle.
A method of forming a microelectronic assembly, comprising:
- preparing a first bonding surface of a first substrate, including planarizing the first bonding surface to have a first predetermined maximum surface variance, the first bonding surface comprising a dielectric and including one or more conductive interconnects;
- direct bonding a sacrificial second substrate to the first bonding surface using a direct dielectric-to-dielectric, non-adhesive technique to utilize the second substrate as a handle;
- and
- while supporting the first substrate at the handle, the handle bonded to the first bonding surface of the first substrate, planarizing a second surface of the first substrate, opposite the first surface, to form a second bonding surface of the first substrate having a second predetermined maximum surface variance;
- and
- singulating the first substrate into a plurality of microelectronic dies.
Dependencies are inferred from the claim text.