Slotted MEMS force sensor
AssigneeNextInput, Inc.
InventorsMehrnaz Youssefi, Julius Minglin Tsai
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Abstract
Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.
Claims20
A microelectromechanical system (“MEMS”) force sensor, comprising:
- a semiconductor substrate;
- a plurality of electrical connectors disposed on the semiconductor substrate;
- at least one through slot formed on the semiconductor substrate, wherein the at least one through slot is an opening extending entirely through the semiconductor substrate, wherein the at least one through slot defines opposing ends, and wherein the at least one through slot is configured to create a stress concentration region on the semiconductor substrate in proximity to at least one of the opposing ends of the at least one through slot;
- and
- at least one sensing element formed on the semiconductor substrate, wherein the at least one sensing element is disposed in the stress concentration region, and wherein the at least one sensing element is configured to change an electrical characteristic in response to stress.
A microelectromechanical system (“MEMS”) force sensor, comprising:
- a semiconductor substrate;
- a plurality of electrical connectors disposed on the semiconductor substrate;
- at least one through slot formed on the semiconductor substrate, wherein the at least one through slot is an opening extending entirely through the semiconductor substrate, and wherein the at least on through slot defines opposing ends;
- a selective thinning region formed on the semiconductor substrate, wherein the selective thinning region and the at least one through slot are configured to a create stress concentration region on the semiconductor substrate in proximity to at least one of the opposing ends of the at least one through slot;
- and
- at least one sensing element formed on the semiconductor substrate, wherein the at least one sensing element is disposed in the stress concentration region, and wherein the at least one sensing element is configured to change an electrical characteristic in response to stress.
Dependencies are inferred from the claim text.