Nanoparticle structure and process for manufacture
AssigneeInternational Business Machines Corporation
InventorsQing Cao, Kangguo Cheng, Juntao Li
Life of this patent
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Abstract
A method for forming nanoparticles includes forming a stack of alternating layers including a first material disposed between a second material. The stack of alternating layers is patterned to form pillars. A dielectric layer is conformally deposited over the pillars. The pillars are annealed in an oxygen environment to modify a shape of the first material of the alternating layers. The dielectric layer and the second material are etched selectively to the first material to form nanoparticles from the first material.
Claims13
A method for forming nanoparticles, comprising:
- patterning a stack of alternating material layers to form pillars, wherein the stack of alternating material layers includes a first material of the alternating layers and a second material of the alternating layers;
- depositing a dielectric layer over the pillars;
- oxidizing sidewalls of the pillars to modify a shape of the first material of the alternating layers;
- and
- removing the dielectric layer and the second material of the stack of alternating material layers to form nanoparticles from the first material.
A method for forming nanoparticles, comprising:
- forming a stack of alternating layers on a substrate including SiGe layers disposed between Si material;
- patterning the stack of alternating layers to form pillars having side dimensions;
- conformally depositing an oxide layer over the pillars;
- thermally annealing the pillars in an oxygen environment to modify a shape of the SiGe layers;
- and
- wet etching the dielectric layer and the Si material selective to the SiGe layers to form SiGe nanoparticles with sidewalls having a concave curvature relative to a center of the nanoparticle and an apex at each intersecting edge for said sidewalls having the concave curvature.
Dependencies are inferred from the claim text.