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US 10,958,036 B2Granted
Semiconductor light-emitting device and optical device
AssigneesFujitsu Limited, Photonics Electronics Technology Research Association
InventorNobuaki Hatori
Life of this patent
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Abstract
A semiconductor light-emitting device includes an active layer including quantum dots, a diffraction grating, a low-reflectance film disposed at a light-emitting end of the active layer, and a high-reflectance film disposed at another end of the active layer and having an optical reflectance higher than an optical reflectance of the low-reflectance film.
Claims8
A semiconductor light-emitting device, comprising:
- an active layer including quantum dots;
- a diffraction grating;
- a low-reflectance film disposed at a light-emitting end of the active layer;
- and
- a high-reflectance film disposed at another end of the active layer and having an optical reflectance higher than an optical reflectance of the low-reflectance film,
- wherein the semiconductor light-emitting device is a distributed-feedback (DFB) laser diode;
- and
- the optical reflectance of the high-reflectance film is greater than or equal to 80% at a DFB wavelength and is less than or equal to 50% at a gain peak wavelength of the quantum dots of the active layer.
5 more elements
An optical device, comprising:
- a semiconductor light-emitting device;
- an optical modulator that modulates light emitted from the semiconductor light-emitting device;
- and
- an emitter that emits light received from the optical modulator,
- wherein the semiconductor light-emitting device includes
- an active layer including quantum dots,
- a diffraction grating,
- a low-reflectance film disposed at a light-emitting end of the active layer, and
- a high-reflectance film disposed at another end of the active layer and having an optical reflectance higher than an optical reflectance of the low-reflectance film,
- wherein the semiconductor light-emitting device is a distributed-feedback (DFB) laser diode;
- and
- wherein the optical reflectance of the high-reflectance film is greater than or equal to 80% at a DFB wavelength and is less than or equal to 50% at a gain peak wavelength of the quantum dots of the active layer.
9 more elements
Dependencies are inferred from the claim text.