Heusler compounds with non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF)

A device, comprising:

• a substrate;
• a multi-layered structure overlying the substrate;
• the structure comprising a first layer, a second layer, and a third layer, wherein:
• the first layer includes a first magnetic Heusler compound,
• the second layer is non-magnetic at room temperature and comprises Ru and E,
• wherein E comprises at least one other element that includes Al, the composition of the second layer being given by Ru1−xEx, with x in the range from 0.45 to 0.55;
• and
• the third layer includes a second magnetic Heusler compound;
• a tunnel barrier overlying the multi-layered structure;
• and
• an additional magnetic layer in contact with the tunnel barrier, wherein the additional magnetic layer has a switchable magnetic moment.

A device, comprising:

• a multi-layered structure comprising a first layer, a second layer, and a third layer, wherein:
• the first layer is magnetic and includes a Heusler and/or a L10 compound,
• the second layer is non-magnetic at room temperature and comprises Ru and E, wherein E comprises at least one other element that includes Al, the composition of the second layer being represented by Ru1−xEx, with x in the range from 0.45 to 0.55;
• and
• the third layer is magnetic and includes a Heusler and/or a L10 compound.