Spin transfer MRAM element having a voltage bias control

A spin-transfer torque magnetoresistive memory element comprises at least one memory cell (10, 50) comprising a magnetoresistive memory element, a bit line (19), a digital line (13), a select transistor, and a control circuitry,

• wherein the magnetoresistive memory element further comprises:
• a recording layer (15) having a magnetic anisotropy and having a variable magnetization direction;
• a reference layer (17) having a magnetic anisotropy and having an invariable magnetization direction;
• a tunnel barrier layer (16) provided between the recording layer (15) and the reference layer (17);
• a dielectric anisotropy modification layer (14) provided on a surface of the recording layer (15), which is opposite to a surface of the recording layer (15) where the tunnel barrier layer (16) is provided, having a sufficient thickness capable of functioning as an insulating layer to prevent leakage current from a voltage bias layer (13) to the recording layer (15);
• the voltage bias layer (13) provided on a surface of the dielectric anisotropy modification layer (14), which is opposite to a surface of the dielectric anisotropy modification layer (14) where the recording layer (15) is provided, wherein the voltage bias layer (13) is electrically connected to the digital line of the spin-transfer torque magnetoresistive memory;
• an upper electrode (18) provided on a surface of the reference layer (17), which is opposite to a surface of the reference layer (17) where the tunnel barrier layer (16) is provided, wherein the upper electrode (18) is electrically connected to the bit line of the spin-transfer torque magnetoresistive memory;
• a middle electrode (21) provided as an electric connecting terminal of the recording layer (15) of the magnetoresistive element, wherein the middle electrode (21) is electrically connected to a drain/source terminal of the select transistor of the spin-transfer torque magnetoresistive memory;
• and wherein the control circuitry is coupled through the bit line (19), the digital line and the select transistor to selected ones of a plurality of magnetoresistive memory elements, configured to provide a bi-directional spin-transfer recording current between the upper electrode and the middle electrode and to provide a bias voltage between the digital line and the middle electrode to generate an electric field through the dielectric anisotropy modification layer wherein an electric field potential direction is perpendicular to a surface of the recording layer for modifying a perpendicular anisotropy in the recording layer (15) in a recording operation, and configured to provide a reading current between the bit line (19) and the select transistor in a reading operation.