Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method

A power switching device comprising at least one transistor of the SiC or GaN MOSFET type traveled by a main current;

• wherein the switching device comprises at least one measuring module configured to indirectly measure the main current of the transistor from an electromagnetic field produced by the transistor and at least one protection circuit configured to detect a short-circuit based on a sign of a temporal drift of the main current;
• wherein the measuring module comprises an antenna galvanically isolated from the transistor;
• and
• wherein the antenna is located in a circuit, the center of which is the transistor and the radius of which is comprised between 1 mm and 10 cm.