RF power transistors with impedance matching circuits, and methods of manufacture thereof

A packaged radio frequency (RF) amplifier device comprising:

• a device substrate;
• a transistor coupled to the device substrate, wherein the transistor includes a control terminal and first and second current carrying terminals;
• an output pre-match impedance conditioning shunt circuit coupled to the device substrate between the first current carrying terminal and a ground reference node, wherein the shunt circuit includes at least a first inductance, a second inductance, and a first capacitor coupled in series, wherein an intermediate node is between the first and second inductances, an RF cold point node is between the second inductance and the first capacitor, the first inductance comprises a plurality of bondwires coupled between the first current carrying terminal and the second inductance, and the second inductance comprises an integrated inductor coupled between the first inductance and a first terminal of the first capacitor;
• a second capacitor with a first terminal connected to the intermediate node, and a second terminal connected to the ground reference node;
• and
• a video bandwidth circuit coupled between the RF cold point node and the ground reference node.

A method of manufacturing a radio frequency (RF) amplifier device, the method comprising the steps of:

• coupling a transistor to a RF amplifier device substrate, wherein the transistor includes a control terminal and first and second current carrying terminals;
• coupling an output pre-match impedance conditioning shunt circuit to the RF amplifier device substrate between the first current carrying terminal and a ground reference node, wherein the output pre-match impedance conditioning shunt circuit includes a first inductance, a second inductance, and a first capacitor coupled in series, and wherein an RF cold point node is between the second inductance and the first capacitor;
• coupling a plurality of bondwires between the first current carrying terminal and an intermediate node located between the first and second inductances, wherein the plurality of bondwires corresponds to the first inductance;
• coupling one or more integrated inductors between the intermediate node and a first terminal of the first capacitor, wherein the one or more integrated inductors corresponds to the second inductance;
• connecting a first terminal of a second capacitor to the intermediate node;
• connecting a second terminal of the second capacitor to the ground reference node;
• and
• connecting a video bandwidth circuit between the RF cold point node and the ground reference node.