High-frequency amplifier
AssigneeMitsubishi Electric Corporation
InventorToshio Matsui
Life of this patent
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Abstract
A transistor (2) is provided on a surface of a semiconductor substrate (1). First and second wirings (10,11) are provided on the surface of the semiconductor substrate (1) and sandwich the transistor (2). Plural wires (20) pass over the transistor (2) and are connected to the first and second wirings (10,11). A sealing material (21) sealing the transistor (2), the first and second wirings (10,11), and the plural wires (20). The sealing material (21) contains a filler (21a). An interval distance between the plural wires (20) is smaller than a particle diameter of the filler (21a). The sealing material (21) does not intrude into a space between the plural wires (20) and the transistor (2) so that a cavity (22) is formed.
Claims6
A high-frequency amplifier comprising:
- a semiconductor substrate;
- a transistor provided on a surface of the semiconductor substrate and having a gate electrode, a source electrode and a drain electrode;
- first and second wirings provided on the surface of the semiconductor substrate and sandwiching the gate electrode, the source electrode and the drain electrode;
- plural wires passing over the gate electrode, the source electrode and the drain electrode and connected to the first and second wirings;
- and
- a sealing material sealing the transistor, the first and second wirings, and the plural wires,
- wherein the sealing material contains a filler,
- an interval distance between the plural wires is smaller than a particle diameter of the filler, and
- the sealing material does not intrude into a space between the plural wires and the transistor so that a cavity is formed.
Dependencies are inferred from the claim text.