Semiconductor device

A semiconductor device, that generates or detects terahertz waves, the semiconductor device comprising:

• a substrate;
• and
• a resonator configured to resonate the terahertz waves and provided on the substrate, the resonator comprising:
• a semiconductor layer configured to have a gain of terahertz waves;
• a first electrode configured to be connected to the semiconductor layer;
• a second electrode configured to be arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and to be electrically connected to the semiconductor layer;
• a third electrode configured to be arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer, the semiconductor layer and the second electrode being arranged between the first electrode and the third electrode;
• a conductor electrically connecting the second electrode to the third electrode, the conductor being arranged between the substrate and the third electrode;
• and
• a dielectric layer configured to be arranged around the conductor, the semiconductor layer and the second electrode and between the first electrode and the third electrode and to be thicker than the semiconductor layer,
• wherein a thickness of the conductor is greater than a thickness of the semiconductor layer,
• wherein, in a plan view, an outline of the semiconductor layer is entirely included in an outline of the third electrode, and
• wherein a thickness of the conductor is greater than a thickness of the third electrode and is 1/10 or less of an effective wavelength in the dielectric layer of the resonating terahertz waves.

A semiconductor device that generates or detects terahertz waves, the semiconductor device comprising:

• a substrate;
• and
• a resonator configured to resonate the terahertz waves and provided on the substrate, the resonator comprising:
• a semiconductor layer configured to have a gain of terahertz waves;
• a first electrode configured to be connected to the semiconductor layer;
• a second electrode configured to be arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer and to be electrically connected to the semiconductor layer;
• a third electrode configured to be arranged at a side opposite to the side at which the first electrode is arranged with respect to the semiconductor layer, the semiconductor layer and the second electrode being arranged between the first electrode and the third electrode;
• a conductor electrically connecting the second electrode to the third electrode, the conductor being arranged between the substrate and the third electrode;
• and
• a dielectric layer configured to be arranged around the conductor, the semiconductor layer and the second electrode and between the first electrode and the third electrode and to be thicker than the semiconductor layer,
• wherein a thickness of the conductor is greater than a thickness of the semiconductor layer,
• wherein, in a plan view, an outline of the semiconductor layer is entirely included in an outline of the third electrode, and
• wherein a thickness of the dielectric layer is greater than the thickness of the semiconductor layer and is 1/10 or less of an effective wavelength in the dielectric layer of the resonating terahertz waves.