Methods for forming a perovskite solar cell
AssigneeUniversity of Louisville Research Foundation, Inc.
InventorsThad Druffel, Brandon Lavery, Krishnamraju Ankireddy, Amir Hossein Ghahremani, Blake Martin, Gautam Gupta
Life of this patent
Estimating the term…
Abstract
A perovskite thin film and method of forming a perovskite thin film are provided. The perovskite thin film includes a substrate, a hole blocking/electron transport layer, and a sintered perovskite layer. The method of forming the perovskite solar cell includes depositing a perovskite layer onto a substrate and processing (for example, by sintering) the perovskite layer with intense pulsed light to initiate a radiative thermal response that is enabled by an alkyl halide additive.
Claims18
A method of forming a perovskite thin film, comprising:
- depositing a perovskite layer over a substrate, wherein the perovskite layer comprises a mixed halide perovskite having a crystal structure and characterized by surface vacancies, wherein the mixed halide perovskite is formed from a perovskite precursor composition including a light sensitive alkyl halide having 1 to 20 carbons and a halide species;
- adding the light sensitive alkyl halide to the perovskite layer;
- and
- after depositing the perovskite layer, delivering the halide species into one or more of the surface vacancies by exposing the perovskite layer to 1-10 pulses of intense pulsed light, the intense pulsed light comprising wavelengths in a range from 150 nm to 1000 nm including UV wavelengths and non-UV wavelengths within said range, an energy density of about 1 J/cm2 to about 35 J/cm2, and each pulse having a duration of about 1 microsecond to about 5 milliseconds.
A method of forming a perovskite thin film, comprising:
- depositing a perovskite layer over a substrate, wherein the perovskite layer comprises a mixed halide perovskite having a crystal structure and characterized by surface vacancies, wherein the mixed halide perovskite is formed from a perovskite precursor composition including a light sensitive alkyl halide, and wherein the alkyl halide comprises 1 to 20 carbons and a halide species chosen from the group chlorine, bromine, and iodine;
- adding the light sensitive alkyl halide to the perovskite layer;
- and
- after depositing the perovskite layer, delivering the halide species into one or more of the surface vacancies by exposing the perovskite layer to 1-10 pulses of intense pulsed light, the intense pulsed light comprising wavelengths in a range from 150 nm to 1000 nm including UV wavelengths and non-UV wavelengths within said range, an energy density of about 1 J/cm2 to about 35 J/cm2, and each pulse having a duration of about 1 microsecond to about 5 milliseconds.
A method of forming a perovskite thin film, comprising:
- depositing a perovskite layer over a substrate having an electron transport layer, wherein the perovskite layer comprises a mixed halide perovskite having a crystal structure and characterized by surface vacancies, wherein the mixed halide perovskite is formed from a perovskite precursor composition including a light sensitive alkyl halide having 1 to 20 carbons and a halide species;
- adding the light sensitive alkyl halide to the perovskite layer;
- and
- after depositing the perovskite layer, delivering the halide species into one or more of the surface vacancies by exposing the perovskite layer to at least one pulse of intense pulsed light comprising wavelengths in a range from 150 nm to 1000 nm, and each pulse having an energy density of about 1 J/cm2 to about 35 J/cm2.
Dependencies are inferred from the claim text.