Method having resistive memory crossbar array employing selective barrier layer growth
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Chih-Chao Yang, Lawrence A. Clevenger
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Abstract
A method is presented for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array. The method includes forming a plurality of conductive lines within an interlayer dielectric (ILD), forming a barrier layer over at least one conductive line of the plurality of conductive lines, the barrier layer directly contacting an entire upper surface of the at least one conductive line, and forming a RRAM stack including a bottom electrode, a high-k dielectric layer, and a top electrode over the barrier layer.
Claims18
A method for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array, the method comprising:
- forming a plurality of conductive lines within an interlayer dielectric (ILD);
- forming a refractory metal barrier layer over at least one conductive line of the plurality of conductive lines;
- forming a RRAM stack in direct contact with the refractory metal barrier layer;
- and
- forming outer spacers adjacent the RRAM stack;
- wherein upper surface areas and sidewalls of the refractory metal barrier layer remain exposed after formation of the outer spacers,
- wherein the refractory metal barrier layer directly contacts an entire upper surface of the at least one conductive line.
A method for protecting resistive random access memory (RRAM) stacks within a resistive memory crossbar array, the method comprising:
- forming a refractory metal barrier layer over at least one conductive line of a plurality of conductive lines;
- forming a RRAM stack in direct contact with the refractory metal barrier layer, the RRAM stack including at least three layers;
- and
- forming outer spacers adjacent the RRAM stack;
- wherein upper surface areas and sidewalls of the refractory metal barrier layer remain exposed after formation of the outer spacers,
- wherein the refractory metal barrier layer directly contacts an entire upper surface of the at least one conductive line.
Dependencies are inferred from the claim text.