Method for producing at least one optoelectronic component, and optoelectronic component

A method comprising:

• providing a substrate having at least one aperture;
• applying at least one semiconductor chip to the substrate, the semiconductor chip having a main radiation exit surface facing away from the substrate;
• arranging barrier structures provided that the barrier structures are not already part of the substrate, wherein the semiconductor chip is spaced apart from the barrier structures as seen in a side cross-section;
• applying an auxiliary carrier at least to the main radiation exit surface and to the barrier structures, wherein the auxiliary carrier is a foil;
• introducing a casting material via the at least one aperture in the substrate so that the casting material is arranged between the barrier structures and the semiconductor chip and between the substrate and the auxiliary carrier, the main radiation exit surface being free of the casting material, wherein introducing the casting material via the at least one aperture comprises introducing the casting material via a first aperture while venting via a second aperture;
• and
• curing the casting material.

A method comprising:

• providing a substrate having at least one aperture;
• applying at least one semiconductor chip to the substrate, the semiconductor chip having a main radiation exit surface facing away from the substrate;
• arranging barrier structures provided that the barrier structures are not already part of the substrate, wherein the semiconductor chip is spaced apart from the barrier structures as seen in a side cross-section, and wherein the barrier structures have the same height in the side cross-section as a height of the semiconductor chip;
• applying an auxiliary carrier at least to the main radiation exit surface and to the barrier structures, wherein the auxiliary carrier is a foil;
• introducing a casting material via the at least one aperture in the substrate so that the casting material is arranged between the barrier structures and the semiconductor chip and between the substrate and the auxiliary carrier, the main radiation exit surface being free of the casting material;
• and
• curing the casting material.