Flip chip type light emitting diode chip

A flip chip type light emitting diode chip comprising:

• a substrate;
• a first conductivity type semiconductor layer disposed on the substrate;
• a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer;
• a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer;
• a contact electrode laterally spaced apart from the mesa in a first direction and disposed on the first conductivity type semiconductor layer, the contact electrode being in ohmic contact with the first conductivity type semiconductor layer;
• a current spreader disposed on a partial region of the transparent electrode and electrically connected to the transparent electrode;
• a first insulating reflection layer covering the substrate, the first conductivity type semiconductor layer, the mesa, the transparent electrode, the contact electrode and the current spreader, having openings exposing portions of the contact electrode and the current spreader, and including a distributed Bragg reflector (DBR);
• a first pad electrode and a second pad electrode disposed on the first insulating reflection layer, and connected to the contact electrode and the current spreader through the openings, respectively;
• and
• a second insulating reflection layer disposed under the substrate, and including the distributed Bragg reflector (DBR),
• wherein the second insulating reflection layer is spaced apart from the first insulating reflection layer in a second direction which is perpendicular to the first direction.