Light emitting device including a passivation layer on a light emitting structure

A light emitting device comprising:

• a light emitting structure including a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer;
• a substrate disposed below the first conductivity type semiconductor layer;
• a plurality of third electrodes disposed on the first conductivity type semiconductor layer exposed by removing a portion of the second conductivity type semiconductor layer and the active layer;
• a plurality of fourth electrodes disposed on the second conductivity type semiconductor layer;
• a third insulating reflective layer disposed on a side surface and a part of an upper surface of the plurality of third electrodes to expose an upper surface of the plurality of third electrodes;
• a fourth insulating reflective layer disposed on a side surface and a part of an upper surface of the plurality of fourth electrodes so as to expose the upper surface of the plurality of fourth electrodes;
• a third wetting layer disposed on the third insulating reflective layer and the plurality of third electrodes;
• and
• a fourth wetting layer disposed on the fourth insulating reflective layer and the plurality of fourth electrodes,
• wherein an end of the fourth insulating reflective layer is spaced apart from an outer surface of the light emitting structure by a predetermined distance.