Semiconductor device increasing light output

A semiconductor device package comprising:

• a body;
• and
• a semiconductor device disposed on the body,
• wherein the semiconductor device comprising:
• a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
• a first electrode disposed on the first conductive semiconductor layer;
• a second electrode disposed on the second conductive semiconductor layer;
• and
• a current blocking layer disposed between the second conductive semiconductor layer and the second electrode,
• wherein, the first conductive semiconductor layer includes a first region in which the first electrode is disposed, and a second region having a thickness less than that of the first region, and the current blocking layer is disposed in a region corresponding to the first region in a thickness direction thereof,
• wherein the first region is disposed at an edge of the first conductive semiconductor layer;
• and
• the second region is disposed at a center of the first conductive semiconductor layer, and
• wherein the first electrode includes at least one pad disposed at a corner of the first conductive semiconductor layer and a branch electrode extending from the pad.