Heterostructure and light-emitting device employing the same
AssigneeBolb Inc.
InventorsJianping Zhang, Ying Gao, Ling Zhou
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Abstract
Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.
Claims24
A heterostructure for a light emitting device or a photodetector, comprising alternately stacked n-type doped AlbGa1-bN barriers and n-type doped AlwGa1-wN wells, wherein a thickness of each of the n-type doped AlbGa1-bN barriers and the n-type doped AlwGa1-wN wells respectively satisfies:
- L
- i
- ≤
- (
- b
- -
- w
- 0.2
- )
-
- 10
- 13
-
- 1
- 2
-
- N
- Di
- ×
- 10
- 7
-
-
- nm
- ,
- where Li is the thickness of the ith AlbGa1-bN barrier or AlwGa1-wN well, ND is donor concentration (in cm−3) in the ith AlbGa1-bN barrier or AlwGa1-wN well, b is Al-composition of the ith AlbGa1-bN barrier, and w is Al-composition of the ith AlwGa1-wN well.
Dependencies are inferred from the claim text.