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US 10,950,748 B2Granted
Method for preventing crack extensions during lift-off process
AssigneeMikro Mesa Technology Co., Ltd.
InventorLi-Yi Chen
Life of this patent
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Abstract
A method for preventing crack extensions during a lift-off process is provided. The method includes forming an epitaxial layer on a wafer substrate; forming a guard trench in the epitaxial layer, wherein a depth of the guard trench in a thickness direction of the epitaxial layer is at least half of a thickness of the epitaxial layer, and a total length of the guard trench is greater than at least a quarter of a circumference of the epitaxial layer; and performing a lift-off process to separate the wafer substrate from the epitaxial layer.
Claims10
A method for preventing crack extensions during a lift-off process, comprising:
- forming an epitaxial layer on a wafer substrate;
- forming a guard trench in the epitaxial layer, wherein a depth of the guard trench in a thickness direction of the epitaxial layer is at least half of a thickness of the epitaxial layer, and a total length of the guard trench is greater than at least a quarter of a total length of a circumference of the epitaxial layer;
- and
- performing a lift-off process to separate the wafer substrate from the epitaxial layer.
1 more element
Dependencies are inferred from the claim text.