Method for producing a plurality of optoelectronic components, and optoelectronic component

A method of producing a plurality of optoelectronic components, the method comprising:

• providing a substrate;
• epitaxially applying a sacrificial layer on the substrate, wherein the sacrificial layer has a layer thickness greater than 300 nm, and wherein the sacrificial layer comprises AlxGa(1-x)As with 0<x≤1;
• epitaxially applying a semiconductor layer sequence on the sacrificial layer;
• forming trenches extending in a vertical direction through the semiconductor layer sequence to the sacrificial layer such that a plurality of regions in the semiconductor layer sequence is formed;
• and
• wet thermally oxidizing the sacrificial layer such that the substrate is non-destructively removable from the semiconductor layer sequence,
• wherein the sacrificial layer comprises at least three and optionally four sublayers in a direction facing away from the substrate, a first sublayer comprising InGaAlP, a second sublayer comprising GaAs, a third sublayer comprising AlxGa(1-x)As with 0<x≤1 and a fourth sublayer comprising GaAs, and
• wherein the first sublayer is arranged on the substrate followed by the second sublayer, the third sublayer and the fourth sublayer in the direction facing away from the substrate.