Light receiving element and method of manufacturing the same

A light receiving element comprising:

• a semiconductor substrate formed with a compound semiconductor;
• a semiconductor layer including a first layer of a first conductivity type, a light absorbing layer, a second layer of a second conductivity type, and a third layer of the second conductivity type that are sequentially stacked on the semiconductor substrate, the semiconductor layer having a mesa, a first terrace, a first n-type contact region, and a groove formed in a region extending from a central portion toward an outer side of the semiconductor substrate, the groove extending to the semiconductor substrate;
• a first electrode that is provided on the mesa and is electrically connected to the third layer;
• a second electrode that is provided on a portion extending from a top of the first terrace to an inner side of the groove, and is in contact with and electrically connected to the first layer in the first n-type contact region and is in contact with the semiconductor substrate inside the groove, wherein
• the mesa and the first terrace include the first layer, the light absorbing layer, the second layer, and the third layer, and
• the first n-type contact region is formed by the first layer.