Semiconductor nanocrystal, and method of preparing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsShin Ae Jun, Eun Joo Jang, Soo Kyung Kwon, Taek Hoon Kim, Won Joo Lee
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Abstract
A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0≤x≤1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.
Claims20
A nanocrystal comprising:
- a core comprising a Group III element, and a Group V element;
- and
- a shell overcoating the core and comprising ZnSeS multi-layers comprising Zn, Se, and S,
- wherein each of the ZnSeS multi-layers of the shell comprises a compound of the formula ZnSeyS(1-y), wherein 0≤y≤1, and
- wherein the ZnSeS multi-layers have a Se:S concentration ratio gradient, wherein the Se:S concentration ratio gradient comprises an increasing concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined monolayer;
- and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined monolayer to an outermost monolayer, wherein the predetermined monolayer is located between a first monolayer directly disposed on a surface of the core and the outermost monolayer.
A method of preparing a nanocrystal comprising a core comprising a Group III element, and a Group V element, and a shell comprising ZnSeS multi-layers comprising Zn, Se, and S, and formed on a surface of the core, the method comprising:
- providing a nanocrystal core comprising a Group III element, and a Group V element, and
- contacting the nanocrystal core with a precursor of Zn, Se, and S to form the ZnSeS multi-layers of the shell overcoating the core and prepare the nanocrystal,
- wherein each of the ZnSeS multi-layers of the shell comprising a compound of the formula ZnSeyS(1-y), wherein 0≤y≤1, and
- wherein forming the ZnSeS multi-layers comprises introducing Zn, Se and S precursors in a mole ratio such that the ZnSeS multi-layers have a Se:S concentration ratio gradient, wherein the Se:S concentration ratio gradient comprises an increasing concentration of Se and a decreasing concentration of S in a direction from the core to a predetermined monolayer;
- and a decreasing concentration of Se and an increasing concentration of S in a direction from the predetermined monolayer to an outermost monolayer, wherein the predetermined monolayer is located between a first monolayer directly disposed on a surface of the core and the outermost monolayer.
Dependencies are inferred from the claim text.