Semiconductor structures and manufacturing the same

#This application is a national phase entry of International Application No. PCT/FI2018/050099, filed Feb. 13, 2018, which claims priority to Finnish Patent Application No. 20175123, filed on Feb. 15, 2017, the entire contents of which are incorporated herein by reference.

#Various types of semiconductor photodetectors such as photodiodes are widely used in different light sensing applications, for example, in imaging and non-imaging light sensing systems for medical, security, and industrial applications.

#Typically, a semiconductor photodetector comprises a photodiode based on a p-n junction. A p-n junction is commonly formed by implanting foreign impurities on a semiconductor substrate surface, i.e. impurities of different conductivity type than the semiconductor substrate, and annealing the implanted region.

#The present description will be better understood from the following detailed description read in light of the accompanying drawings, wherein:

#FIGS. 1 and 2 illustrate schematic, sectional perspective views of semiconductor structures;

#FIG. 3 illustrate a cross-sectional view of a photodetector structure;

#The drawings of the FIGS. 1 to 3 and 5 are not in scale.

#The detailed description provided below in connection with the appended drawings is intended as a description of a number of embodiments and is not intended to represent the only forms in which the embodiments may be constructed, implemented, or utilized.

#The layered semiconductor structure 100 is formed as sheet-like structure having, at the location of the cross section illustrated in FIG. 1, a width of W. This width, and the lateral dimensions in general are substantially greater than the thickness H of the semiconductor substrate. However, the accurate relationship between the lateral dimensions and the thickness may vary in different embodiments. Also the absolute width may vary, depending on the embodiment and the field of application of the semiconductor structure, and may lie, for example, in the range of some hundreds of micrometers to several centimeters.